SnO₂ Films Elaborated by Radio Frequency Magnetron Sputtering as Potential Transparent Conducting Oxides Alternative for Organic Solar Cells

Fabrication of transparent conducting amorphous Zn–Sn–In–O thin films by direct current magnetron sputtering

Amorphous ZnO–SnO2–In2O3 films were grown by direct current magnetron sputtering from vacuum hot pressed ceramic oxide targets of Zn: In:Sn cation ratios 1:2:1 and 1:2:1.5 onto glass substrates. X-ray diffraction analysis showed that the microstructure remained amorphous during annealing at 200 °C for up to 5 hours. By monitoring the electrical resistivity, oxygen content and substrate temperat...

Transparent conducting impurity-co-doped ZnO:Al thin films prepared by magnetron sputtering

This report describes the effects of impurity-co-doping on transparent conducting Al-doped ZnO (AZO) films prepared by DC magnetron sputtering using a target composed of dopant powder added to a mixture of ZnO and Al O powder. The chemical 2 3 stability of transparent conducting AZO films could be improved by co-doping Cr or Co without significantly altering the original electrical and optical ...

Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications

In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not bee...

Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application

Organic electro-optic modulator using transparent conducting oxides as electrodes.

A novel organic electro-optic (EO) modulator using transparent conducting oxides (ZnO and In2O3) as electrodes is demonstrated for the first time. The modulator employs the poled guest-host chromophore/polymer material AJL8/APC having r33=35pm/V and is able to achieve a low Vpi=2.8 V switching voltage for an 8mm-long device at a wavelength of 1.31ìm. This corresponds to a Vpi=1.1 V switching vo...